SST25VF512A-33-4C-QAE Microchip Technology, SST25VF512A-33-4C-QAE Datasheet - Page 15

• Manufacturer Part Number: SST25VF512A-33-4C-QAE
• Description: IC FLASH SER 512K 33MHZ 8WSON
• Manufacturer: Microchip Technology

Specifications of SST25VF512A-33-4C-QAE

• Memory Type: FLASH
• Memory Size: 512K (64K x 8)
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 8-WSON
• Format - Memory: FLASH
• Speed: 33MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Architecture: Sectored
• Interface Type: 4-Wire
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 10 mA
• Mounting Style: SMD/SMT
• Organization: 4 KB x 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

512 Kbit SPI Serial Flash
SST25VF512A
Write-Enable (WREN)
The Write-Enable (WREN) instruction sets the Write-
Enable-Latch bit to 1 allowing Write operations to occur.
The WREN instruction must be executed prior to any Write
(Program/Erase) operation. CE# must be driven high
before the WREN instruction is executed.
Write-Disable (WRDI)
The Write-Disable (WRDI) instruction resets the Write-
Enable-Latch bit and AAI bit to 0 disabling any new Write
operations from occurring. CE# must be driven high before
the WRDI instruction is executed.
Enable-Write-Status-Register (EWSR)
The Enable-Write-Status-Register (EWSR) instruction
arms the Write-Status-Register (WRSR) instruction and
opens the status register for alteration. The Enable-Write-
Status-Register instruction does not have any effect and
will be wasted, if it is not followed immediately by the Write-
©2006 Silicon Storage Technology, Inc.
FIGURE 12: W
FIGURE 13: W
RITE
RITE
E
D
NABLE
ISABLE
(WREN) S
(WRDI) S
SCK
CE#
SCK
CE#
SO
SO
SI
SI
EQUENCE
EQUENCE
MODE 3
MODE 0
MODE 3
MODE 0
HIGH IMPEDANCE
HIGH IMPEDANCE
MSB
0 1 2 3 4 5 6 7
MSB
0 1 2 3 4 5 6 7
15
Status-Register (WRSR) instruction. CE# must be driven
low before the EWSR instruction is entered and must be
driven high before the EWSR instruction is executed.
04
06
1264 F13.0
1264 F12.0
S71264-02-000
Data Sheet
1/06