M48Z128Y-70PM1 STMicroelectronics, M48Z128Y-70PM1 Datasheet - Page 14

IC NVSRAM 1MBIT 70NS 32DIP

M48Z128Y-70PM1

Manufacturer Part Number
M48Z128Y-70PM1
Description
IC NVSRAM 1MBIT 70NS 32DIP
Manufacturer
STMicroelectronics
Type
NVSRAMr
Datasheets

Specifications of M48Z128Y-70PM1

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP (600 mil) Module
Data Bus Width
8 bit
Organization
128 Kb x 8
Interface Type
Parallel
Access Time
70 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Operating Current
105 mA
Maximum Operating Temperature
70 C
Minimum Operating Temperature
0 C
Mounting Style
Through Hole
Word Size
8b
Density
1Mb
Access Time (max)
70ns
Operating Supply Voltage (typ)
5V
Package Type
PMDIP
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
0C to 70C
Pin Count
32
Mounting
Through Hole
Supply Current
105mA
Memory Configuration
128K X 8
Nvram Features
Internal Battery
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
PMDIP
No. Of Pins
32
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2874-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48Z128Y-70PM1
Manufacturer:
ST
0
Part Number:
M48Z128Y-70PM1
Manufacturer:
ST
Quantity:
20 000
Part Number:
M48Z128Y-70PM1F
Manufacturer:
ST
0
M48Z128, M48Z128Y, M48Z128V*
Figure 12. Power Down/Up Mode AC Waveforms
Table 10. Power Down/Up AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
Table 11. Power Down/Up Trip Points DC Characteristics
Note: 1. All voltages referenced to V
14/21
Symbol
Symbol
t
V
t
V
DR
t
FB
t
t
t
2. V
3. V
2. Valid for Ambient Operating Temperature: T
3. At 25°C; V
F
PFD
WP
t
RB
ER
SO
(2)
R
(3)
(3)
es V
PFD
PFD
V CC
V PFD (max)
V PFD (min)
V SO
E
OUTPUTS
PFD
(max) to V
(min) to V
Power-fail Deselect Voltage
Battery Back-up Switchover Voltage
Expected Data Retention Time
V
V
V
V
Write Protect Time
E Recovery Time
(min).
PFD
PFD
PFD
SS
CC
to V
= 0V.
(max) to V
(min) to V
(min) to V
SS
PFD
PFD
fall time of less than t
(PER CONTROL INPUT)
(min) fall time of less than t
(min) V
RECOGNIZED
VALID
SS
PFD
tWP
PFD
SS
Parameter
tF
V
.
(max) V
CC
CC
(min) V
Rise Time
Fall Time
Parameter
FB
CC
CC
(1,2)
may cause corruption of RAM data.
A
A
Rise Time
Fall Time
tFB
= 0 to 70°C; V
= 0 to 70°C; V
F
may result in deselection/write protection not occurring until 200µs after V
(1)
M48Z128/Y
M48Z128Y
M48Z128V
M48Z128V
M48Z128
CC
CC
= 4.75 to 5.5V, 4.5 to 5.5V, or 3.0 to 3.6V (except where noted).
= 4.75 to 5.5V, 4.5 to 5.5V, or 3.0 to 3.6V (except where noted).
tDR
DON'T CARE
M48Z128/Y
M48Z128/Y
M48Z128V
M48Z128V
HIGH-Z
Min
4.5
4.2
2.8
10
tRB
Min
300
150
10
10
40
40
40
1
Typ
4.6
4.3
2.9
3.0
2.5
tR
(PER CONTROL INPUT)
Max
150
250
120
tER
RECOGNIZED
VALID
Max
4.75
4.5
3.0
AI01031
YEARS
Unit
ms
µs
µs
µs
µs
µs
Unit
CC
V
V
V
V
V
pass-

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