M48Z128Y-85PM1 STMicroelectronics, M48Z128Y-85PM1 Datasheet - Page 11

IC NVSRAM 1MBIT 85NS 32DIP

M48Z128Y-85PM1

Manufacturer Part Number
M48Z128Y-85PM1
Description
IC NVSRAM 1MBIT 85NS 32DIP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M48Z128Y-85PM1

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
85ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP (600 mil) Module
Data Bus Width
8 bit
Organization
128 Kb x 8
Interface Type
Parallel
Access Time
85 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Operating Current
105 mA
Maximum Operating Temperature
70 C
Minimum Operating Temperature
0 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2875-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48Z128Y-85PM1
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
M48Z128Y-85PM1
Manufacturer:
ST
0
M48Z128, M48Z128Y, M48Z128V
2.4
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (see
is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from V
is recommended for through hole and MBRS120T3 is recommended for surface-mount).
Figure 8.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
CC
Supply voltage protection
to V
SS
(cathode connected to V
V CC
Doc ID 2426 Rev 5
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
CC
, anode to V
V CC
V SS
DEVICE
CC
bus. The energy stored in the
SS
). (Schottky diode 1N5817
SS
Operating modes
by as much as
Figure
AI02169
11/20
8)

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