CY62157EV30LL-45ZXI Cypress Semiconductor Corp, CY62157EV30LL-45ZXI Datasheet - Page 6

• Manufacturer Part Number: CY62157EV30LL-45ZXI
• Description: IC SRAM 8MBIT 45NS 48TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62157EV30LL-45ZXI

• Memory Size: 8M (512K x 16)
• Package / Case: 48-TSOP I
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 25 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V, 3.3 V
• Density: 8Mb
• Access Time (max): 45ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 19b
• Package Type: TSOP-I
• Operating Temp Range: -40C to 85C
• Supply Current: 25mA
• Operating Supply Voltage (min): 2.2V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Word Size: 16b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2080-5; CY62157EV30LL-45ZXI

Data Retention Characteristics
Over the Operating Range
Data Retention Waveform
Document #: 38-05445 Rev. *H
Parameter
V
I
t
t
Notes
CCDR
CDR
R
10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
11. Tested initially and after any design or process changes that may affect these parameters.
12. Full device operation requires linear V
13. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
DR
[12]
BHE.BLE
[11]
CE
V
CE
1
CC
or
or
2
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
CC
for data retention
Description
CC
ramp from V
V
CE
V
CC
t
CC(min)
2
CDR
Figure 5. Data Retention Waveform
= 1.5V, CE
< 0.2V , V
DR
to V
CC(min)
IN
1
> V
> V
> 100 s or stable at V
CC
CC
DATA RETENTION MODE
– 0.2V or V
– 0.2V,
Conditions
V
DR
> 1.5V
IN
CC(min)
< 0.2V
> 100 s.
[13]
Industrial/
Auto-A
Auto-E
CC
V
CY62157EV30 MoBL
= V
CC(min)
t
CC(typ)
R
Min
t
1.5
RC
0
, T
A
= 25 °C.
Typ
2
[10]
Max Unit
30
5
Page 6 of 17
A
ns
ns
V
®
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