MT29F2G08ABAEAH4-IT:E Micron Technology Inc, MT29F2G08ABAEAH4-IT:E Datasheet - Page 74

• Manufacturer Part Number: MT29F2G08ABAEAH4-IT:E
• Description: IC FLASH 2G 3.3V SLC 63VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAH4-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 2Gb
• Interface Type: Parallel
• Address Bus: 28b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

Figure 50: INTERNAL DATA MOVE (85h-10h) with Internal ECC Enabled
Figure 51: INTERNAL DATA MOVE (85h-10h) with RANDOM DATA INPUT with Internal ECC Enabled
PROGRAM FOR INTERNAL DATA MOVE (85h–10h)
Figure 52: PROGRAM FOR INTERNAL DATA MOVE (85h–10h) Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
I/O[7:0]
I/O[7:0]
R/B#
R/B#
Cycle type
00h
00h
I/O[7:0]
Source address
Source address
RDY
(5 cycles)
Address
(5 cycles)
Address
Command
35h
35h
The PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command is functionally iden-
tical to the PROGRAM PAGE (80h-10h) command, except that when 85h is written to
the command register, cache register contents are not cleared.
85h
t
R_ECC
t
R_ECC
Address
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
C1
70h
Status
Address
Status
C2
00h
00h
Address
R1
D
D
OUT
OUT
Address
74
D
is optional
R2
D
OUT
OUT
is optional
85h
Address
Destination address
R3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(5 cycles)
85h
Address
2Gb: x8, x16 NAND Flash Memory
Destination address
Command
(5 cycles)
Address
Internal Data Move Operations
10h
Data
(Unlimitted repetitions are possible)
t WB
85h
Column address 1, 2
10h
(2 cycles)
Address
t
PROG_ECC
t PROG
Data
© 2009 Micron Technology, Inc. All rights reserved.
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
10h
t
PROG_ECC
Status
00h
70h