NAND01GR3B2CZA6E NUMONYX, NAND01GR3B2CZA6E Datasheet - Page 40

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NAND01GR3B2CZA6E

Manufacturer Part Number
NAND01GR3B2CZA6E
Description
IC FLASH 1GBIT 63VFBGA
Manufacturer
NUMONYX
Datasheet

Specifications of NAND01GR3B2CZA6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

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Program and erase times and endurance cycles
9
40/61
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Table 18.
Page program time
Block erase time
Program/erase cycles per block (with ECC)
Data retention
Table
18.
Program, erase times and program erase endurance cycles
Parameters
100 000
Min
10
NAND flash
NAND01G-B2B, NAND02G-B2C
Typ
200
2
Max
700
3
cycles
years
Unit
ms
µs

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