NAND01GR3B2CZA6E NUMONYX, NAND01GR3B2CZA6E Datasheet - Page 16

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Description: IC FLASH 1GBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND01GR3B2CZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Signals description
3.7
3.8
3.9
3.10
3.11
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Write Enable (W)
The Write Enable input, W, controls writing to the command interface, input address and
data latches. Both addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 10 µs (min) is required before the
command interface is ready to accept a command. It is recommended to keep Write Enable
High during the recovery time.
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program
or erase operations. When Write Protect is Low, V
program or erase operations.
It is recommended to keep the Write Protect pin Low, V
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R
controller is currently active. When Ready/Busy is Low, V
operation is in progress. When the operation completes Ready/Busy goes High, V
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Refer to the
calculate the value of the pull-up resistor.
During power-up and power-down a minimum recovery time of 10 µs is required before the
command interface is ready to accept a command. During this period the RB signal is Low,
V
V
V
power supply for all operations (read, program and erase).
An internal voltage detector disables all functions whenever V
Table 22
power-transitions.
Each device in a system should have V
widths should be sufficient to carry the required program and erase currents.
V
Ground, V
ground.
OL
DD
DD
SS
.
provides the power supply to the internal core of the memory device. It is the main
ground
supply voltage
and
SS,
Section 11.1: Ready/Busy signal electrical characteristics
Table
is the reference for the power supply. It must be connected to the system
23) to protect the device from any involuntary program/erase during
DD
decoupled with a 0.1 µF capacitor. The PCB track
IL
, the device does not accept any
IL
, during power-up and power-down.
OL
NAND01G-B2B, NAND02G-B2C
, a read, program or erase
DD
is below V
for details on how to
LKO
(see
OH
.