NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 19
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NAND01GW3B2CN6E
Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Specifications of NAND01GW3B2CN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2CN6E
Manufacturer:
Numonyx
Quantity:
5
Part Number:
NAND01GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
NAND01G-B2B, NAND02G-B2C
Table 7.
1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2-Gbit devices. A27 is for 2-Gbit devices only.
Table 8.
Table 9.
cycle
5
Bus
2
3
1
4
th(2)
nd
st
rd
th
(1)
A12 - A17
A18 - A27
A18 - A28
A11 - A16
A17 - A26
A17 - A27
I/O15
I/O8-
Address
A0 - A11
Address
A0 - A10
X
X
X
X
X
Address insertion, x16 devices
Address definitions, x8 devices
Address definitions, x16 devices
I/O7
A18
A26
V
V
A7
IL
IL
I/O6
A17
A25
V
V
A6
IL
IL
I/O5
A16
A24
Block address
Block address
Block address
Block address
V
V
A5
IL
IL
I/O4
A15
A23
A4
V
V
IL
IL
Column address
Column address
Page address
Page address
Definition
Definition
I/O3
A14
A22
V
V
A3
IL
IL
I/O2
A10
A13
A21
V
A2
IL
1-Gbit device
2-Gbit device
1-Gbit device
2-Gbit device
Bus operations
I/O1
A12
A20
V
A1
A9
IL
I/O0
A11
A19
A27
A0
A8
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