NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 19

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

NAND01G-B2B, NAND02G-B2C
Table 7.
1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2-Gbit devices. A27 is for 2-Gbit devices only.
Table 8.
Table 9.
cycle
5
Bus
2
3
1
4
th(2)
nd
st
rd
th
(1)
A12 - A17
A18 - A27
A18 - A28
A11 - A16
A17 - A26
A17 - A27
I/O15
I/O8-
Address
A0 - A11
Address
A0 - A10
X
X
X
X
X
Address insertion, x16 devices
Address definitions, x8 devices
Address definitions, x16 devices
I/O7
A18
A26
V
V
A7
IL
IL
I/O6
A17
A25
V
V
A6
IL
IL
I/O5
A16
A24
Block address
Block address
Block address
Block address
V
V
A5
IL
IL
I/O4
A15
A23
A4
V
V
IL
IL
Column address
Column address
Page address
Page address
Definition
Definition
I/O3
A14
A22
V
V
A3
IL
IL
I/O2
A10
A13
A21
V
A2
IL
1-Gbit device
2-Gbit device
1-Gbit device
2-Gbit device
Bus operations
I/O1
A12
A20
V
A1
A9
IL
I/O0
A11
A19
A27
A0
A8
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