NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 17

no-image

NAND01GW3B2CN6E

Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Datasheets

Specifications of NAND01GW3B2CN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GW3B2CN6E
Manufacturer:
Numonyx
Quantity:
5
Part Number:
NAND01GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
NAND01GW3B2CN6E
Quantity:
3 500
Company:
Part Number:
NAND01GW3B2CN6E
Quantity:
3 500
NAND01G-B2B, NAND02G-B2C
4
4.1
4.2
4.3
4.4
Bus operations
There are six standard bus operations that control the memory. Each of these is described
in this section, see
Typically, glitches of less than 5 ns on Chip Enable, Write Enable and Read Enable are
ignored by the memory and do not affect bus operations.
Command input
Command input bus operations are used to give commands to the memory. Commands are
accepted when Chip Enable is Low, Command Latch Enable is High, Address Latch Enable
is Low and Read Enable is High. They are latched on the rising edge of the Write Enable
signal.
Only I/O0 to I/O7 are used to input commands.
See
Address input
Address input bus operations are used to input the memory addresses. Four bus cycles are
required to input the addresses for 1-Gbit devices whereas five bus cycles are required for
the 2-Gbit device (refer to
The addresses are accepted when Chip Enable is Low, Address Latch Enable is High,
Command Latch Enable is Low and Read Enable is High. They are latched on the rising
edge of the Write Enable signal. Only I/O0 to I/O7 are used to input addresses.
See
Data input
Data input bus operations are used to input the data to be programmed.
Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command
Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the
Write Enable signal. The data is input sequentially using the Write Enable signal.
See
Data output
Data output bus operations are used to read: the data in the memory array, the status
register, the lock status, the electronic signature and the unique identifier.
Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low,
and Command Latch Enable is Low. The data is output sequentially using the Read Enable
signal.
See
Figure 19
Figure 20
Figure 21
Figure 22
and
and
and
and
Table 5: Bus
Table 24
Table 24
Table 24
Table 25
Table 6
for details of the timings requirements.
for details of the timings requirements.
and
for details of the timings requirements.
operations, for a summary.
Table 25
and
Table
for details of the timings requirements.
7, Address insertion).
Bus operations
17/61

Related parts for NAND01GW3B2CN6E