CY62148ELL-55SXIT Cypress Semiconductor Corp, CY62148ELL-55SXIT Datasheet - Page 5
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CY62148ELL-55SXIT
Manufacturer Part Number
CY62148ELL-55SXIT
Description
IC SRAM 4MBIT 55NS 32SOIC
Manufacturer
Cypress Semiconductor Corp
Specifications of CY62148ELL-55SXIT
Memory Size
4M (512K x 8)
Format - Memory
RAM
Memory Type
SRAM
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-SOIC (11.30mm Width)
Memory Configuration
512K X 8
Access Time
55ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
SOIC
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Density
4Mb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
19b
Package Type
SOIC
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
20mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62148ELL-55SXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Capacitance
Thermal Resistance
Data Retention Characteristics
Over the operating range
Document #: 38-05442 Rev. *H
C
C
Θ
Θ
V
I
t
t
Notes
CCDR
CDR
R
Parameter
10. Tested initially and after any design or process changes that may affect these parameters.
11. Typical values are included for reference and are not guaranteed or tested. Typical values are measured at V
12. Chip enable (CE) must be HIGH at CMOS level to meet the I
13. Full device operation requires linear V
Parameter
DR
IN
OUT
JA
JC
Parameter
[13]
[12]
OUTPUT
INCLUDING
V
JIG AND
CC
[10]
[10]
SCOPE
V
Data retention current
Chip deselect to data retention time
Operation recovery time
Parameter
CC
30 pF
for data retention
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Input capacitance
Output capacitance
R
V
R1
R2
TH
TH
R1
[10]
Description
Description
Description
CC
R2
ramp from V
Equivalent to:
Figure 2. AC Test Loads and Waveforms
OUTPUT
DR
T
V
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
to V
A
CC
= 25 °C, f = 1 MHz,
SB2
CC
= V
Rise Time = 1 V/ns
V
V
(min) > 100 µs or stable at V
CC
IN
/ I
CC
THEVENIN
CCDR
= V
> V
(Typ)
3.0 V
DR
CC
spec. Other inputs can be left floating.
GND
Test Conditions
Test Conditions
, CE > V
5.0 V
1800
– 0.2 V or V
1.77
990
639
EQUIVALENT
R
TH
10%
CC
Conditions
– 0.2 V,
ALL INPUT PULSES
IN
CC
V
< 0.2 V
(min) > 100 µs.
90%
Automotive-A
CC
Industrial/
TSOP II
= V
SOIC
CC(typ)
Package
90%
SOIC
75
10
, T
10%
A
Max
Fall Time = 1 V/ns
CY62148E MoBL
10
10
= 25 °C.
Min
45
55
2
–
0
Unit
Package
TSOP II
Ω
Ω
Ω
V
Typ
77
13
–
1
–
–
–
[11]
Page 5 of 14
Max Unit
Unit
pF
pF
–
7
–
–
–
°C/W
°C/W
Unit
µA
ns
ns
ns
V
®
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