M25P32-VMP6G NUMONYX, M25P32-VMP6G Datasheet - Page 41

IC FLASH 32MBIT 75MHZ 8VFQFPN

M25P32-VMP6G

Manufacturer Part Number
M25P32-VMP6G
Description
IC FLASH 32MBIT 75MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P32-VMP6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Package
8VFQFPN EP
Cell Type
NOR
Density
32 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 64
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P32-VMP6G
Manufacturer:
Numonyx/ST Micro
Quantity:
135
Part Number:
M25P32-VMP6G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M25P32-VMP6G
Manufacturer:
ST
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M25P32-VMP6G
Manufacturer:
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Quantity:
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Table 15.
Symbol
t
t
t
t
t
t
t
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
VPPHSL
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
CLQV
CLQX
HLCH
CHHL
CL
SHSL
DP
f
f
C
R
(2)
(3)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(6)
(6)
Applies only to products made with T9HX technology, identified with Process digit “4”
t
t
t
t
t
Alt.
t
DSU
t
CSH
t
CLH
CSS
t
CLL
t
DIS
HO
f
DH
t
HZ
LZ
AC characteristics (
C
V
Clock frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI,
RDID, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock rise time
Clock fall time
S active setup time (relative to C)
S not active hold time (relative to C)
Data In setup time
Data In hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output Disable time
Clock Low to Output valid
Output hold time
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect setup time
Write Protect hold time
Enhanced Program supply voltage High to Chip Select
Low
S High to Deep Power-down mode
S High to Standby mode without Electronic Signature
Read
S High to Standby mode with Electronic Signature
Read
Test conditions specified in
(5)
(5)
(peak to peak)
(peak to peak)
T9HX technology
Parameter
)
Table 10
and
Min.
D.C.
D.C.
Table 12
100
100
200
0.1
0.1
20
6
6
5
5
2
5
5
5
0
5
5
5
5
Typ.
(2)
Max.
(1)
75
33
30
30
8
8
8
8
3
MHz
Unit
MHz
V/ns
V/ns
41/54
ns
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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