M29W400DT55N6F NUMONYX, M29W400DT55N6F Datasheet - Page 17

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M29W400DT55N6F

Manufacturer Part Number
M29W400DT55N6F
Description
IC FLASH 4MBIT 55NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W400DT55N6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8 or 256K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
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0
3.6
3.7
3.8
Special bus operations
Additional bus operations can be performed to read the electronic signature and also to
apply and remove block protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require V
applied to some pins.
Electronic signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in
and
Block protection and blocks unprotection
Each block can be separately protected against accidental Program or Erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. Block Protect and Chip Unprotect
operations are described in
Table 2.
1. X = V
Bus Read
Bus Write
Output Disable
Standby
Read
manufacturer code
Read device code
Table
Operation
IL
or V
3, Bus operations.
Bus operations, BYTE = V
IH
.
V
V
V
V
V
E
X
IH
IL
IL
IL
IL
Appendix B: Block
V
V
V
V
V
G
X
IH
IH
IL
IL
IL
V
V
V
V
V
W
X
IH
IH
IH
IH
IL
IL
Cell address
Command address
X
X
A0 = V
A9 = V
others V
A0 = V
A9 = V
others V
(1)
DQ15A–1, A0-A17
Address inputs
protection.
IL
ID
IH
ID
, A1 = V
IL
IL
,
, A1 = V
,
or V
or V
IH
IH
IL
IL
,
,
DQ14-DQ8
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Data inputs/outputs
(M29W400DT)
(M29W400DB)
Data output
DQ7-DQ0
Data input
ID
Hi-Z
Hi-Z
EEh
Table 2
EFh
20h
to be
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