ESDA6V2S6RL STMicroelectronics, ESDA6V2S6RL Datasheet - Page 4

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ESDA6V2S6RL

Manufacturer Part Number
ESDA6V2S6RL
Description
TVS Diode Arrays 6.2V 200W Unidirect
Manufacturer
STMicroelectronics
Series
ESDA6VxSxr
Datasheet

Specifications of ESDA6V2S6RL

Product Category
TVS Diode Arrays
Polarity
Unidirectional
Channels
18 Channels
Breakdown Voltage
6.2 V
Operating Voltage
5.25 V
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Dimensions
5.3 mm W x 7.2 mm L
Package / Case
SSOP-20
Peak Pulse Power Dissipation
200 W
Factory Pack Quantity
2000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ESDA6V2S6RL
Manufacturer:
ST
0
ESDA6V1S3 / ESDA6V2S6
Fig. 1 : Peak power dissipation versus initial
junction temperature.
Fig. 3 : Clamping voltage versus peak pulse
current (Tj initial = 25 °C).
Rectangular waveform tp = 2.5 s.
Fig. 5 : Relative variation of leakage current
versus junction temperature (typical values).
4/7
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50.0
10.0
200
100
1.0
0.1
10
1
0
25
4
I [Tj] / I [Tj=25°C]
Ppp[Tj initial]/Pp[Tj initial=25°C]
R
Ipp(A)
6
25
R
8 10 12 14 16 18 20 22 24 26 28 30 32
50
50
Tj initial(°C)
Tj(°C)
V
75
75
CL
(V)
100
100
125
tp=2.5µs
150
125
Fig. 2 : Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C).
Fig. 4
voltage (typical values).
Fig. 6 : Peak forward voltage drop versus peak
forward current (typical values).
100
2000
1000
5.00
1.00
0.10
0.01
100
50
20
10
10
0.0
1
1
C(pF)
I
Ppp(W)
FM
(A)
Tj=25°C
: Capacitance versus reverse applied
0.5
1.0
2
1.5
V
V (V)
tp(µs)
FM
R
10
(V)
2.0
2.5
5
F=1MHz
Vosc=30mV
3.0
100
3.5
10

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