M25P16-VMW6TG NUMONYX, M25P16-VMW6TG Datasheet - Page 35

• Manufacturer Part Number: M25P16-VMW6TG
• Description: IC FLASH 16MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P16-VMW6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Package: 8SOIC W
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 32
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P16-VMW6TG; M25P16-VMW6TGTR

8
Figure 21. Power-up timing
Table 8.
1. These parameters are characterized only.
Initial delivery state
The device is delivered with the memory array erased: all bits are set to ‘1’ (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
V CC (max)
Symbol
V CC (min)
t
t
PUW
V
VSL
WI
(1)
(1)
V WI
(1)
V CC
V
Time delay to Write instruction
Write Inhibit voltage
Power-up timing and V
Reset state
CC
device
of the
(min) to S Low
Program, Erase and Write commands are rejected by the device
Chip selection not allowed
Parameter
WI
threshold
tPUW
tVSL
Read access allowed
Min
1.0
30
1
Device fully
accessible
Max
2.1
10
—
AI04009C
time
Unit
ms
µs
35/59
V