M25PE40-VMW6G NUMONYX, M25PE40-VMW6G Datasheet - Page 49

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M25PE40-VMW6G

Manufacturer Part Number
M25PE40-VMW6G
Description
IC FLASH 4MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PE40-VMW6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
WSOIC
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Memory Configuration
512K X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number:
M25PE40-VMW6G
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0
M25PE40
Table 20.
1. Details of how to find the date of marking are given in application note, AN1995.
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
t
Symbol
t
SHQZ
t
t
t
RDP
t
t
t
t
t
t
t
t
t
t
t
t
t
PW
CH
CHDX
CHSH
SHCH
DP
PP
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
CL
DVCH
CLQV
CLQX
SLCH
CHSL
SHSL
THSL
SHTL
CH
t
t
f
f
PE
SE
C
R
(2)
(2)
(3)
(4)
(4)
+ t
(3)
(3)
CL
must be greater than or equal to 1/ f
AC characteristics (33 MHz operation)
t
t
t
t
t
Alt.
t
t
CSS
DSU
t
CSH
CLH
CLL
DIS
HO
f
DH
t
C
V
33 MHz only available for products marked since week 40 of 2005
Clock frequency for the following instructions:
FAST_READ, PW, PP, PE, SE, DP, RDP, WREN,
WRDI, RDSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Slew Rate (peak to peak)
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid
Output Hold time
Top Sector Lock Setup time
Top Sector Lock Hold time
S to Deep Power-down
S High to Standby Power mode
Page Write cycle time (256 bytes)
Page Write cycle time (n bytes)
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Erase cycle time
Sector Erase cycle time
Test conditions specified in
Parameter
C
.
Table 14
and
Table 15
Min.
D.C.
D.C.
100
100
0.1
13
13
10
10
50
3
5
5
5
0
n*0.8/256
n*0.8/256
10.2+
Typ.
0.4+
1.2
DC and AC parameters
11
10
1
(1)
Max.
33
20
12
12
30
25
20
3
5
5
MHz
MHz
Unit
V/ns
ms
ms
ms
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
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