M25PE40-VMN6TP NUMONYX, M25PE40-VMN6TP Datasheet - Page 50

• Manufacturer Part Number: M25PE40-VMN6TP
• Description: IC FLASH 4MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PE40-VMN6TP

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 15ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC N
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PE40-VMN6TPTR

DC and AC parameters
Table 21.
1. See
2. Details of how to find the technology process in the marking are given in AN1995, see also
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
6. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
7. int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
50/62
Symbol
t
t
t
WHSL
SHWL
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
DVCH
CHDX
CHSH
SHCH
CLQV
CLQX
PW
CH
SLCH
CHSL
SHSL
DP
t
CL
PP
information.
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
t
t
SSE
t
CH
t
f
f
PE
SE
BE
W
C
R
(3)
(3)
(4)
(6)
(6)
(4)
+ t
(4)
(5)
(5)
Important note on page
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
t
CSS
DSU
t
CSH
CLH
CLL
DIS
HO
f
DH
t
C
AC characteristics (50 MHz operation, T9HX (0.11µm) process
V
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Slew Rate (peak to peak)
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid under 30 pF/10 pF
Output Hold time
Write Protect Setup time
Write Protect Hold time
S to Deep Power-down
S High to Standby mode
Write Status Register cycle time
Page Write cycle time (256 bytes)
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Erase cycle time
Sector Erase cycle time
Subsector Erase cycle time
Bulk Erase cycle time
6.
Test conditions specified in
Parameter
C
.
Table 14
Min.
D.C.
D.C.
100
100
0.1
50
9
9
5
5
2
5
5
5
0
and
Table 15
int(n/8) × 0.025
Section 13: Ordering
Typ.
0.8
1.5
11
10
80
3
8
(1)
)
(2)
(7)
Max.
150
8/6
33
50
30
15
23
20
10
8
3
3
5
M25PE40
MHz
MHz
V/ns
Unit
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s
s