MT46H64M16LFCK-6:A TR Micron Technology Inc, MT46H64M16LFCK-6:A TR Datasheet - Page 19
![IC DDR SDRAM 1GBIT 60VFBGA](/photos/7/23/72339/60vfbga-package_sml.jpg)
MT46H64M16LFCK-6:A TR
Manufacturer Part Number
MT46H64M16LFCK-6:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H64M16LFCK-5A_TR.pdf
(95 pages)
Specifications of MT46H64M16LFCK-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1336-2
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Table 6: Capacitance (x16, x32) (Continued)
Note 1 applies to all the parameters in this table
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Parameter
Delta input capacitance: CK, CK#
Input capacitance: command and address
Delta input capacitance: command and address
Input/output capacitance: DQ, DQS, DM
Delta input/output capacitance: DQ, DQS, DM
Notes:
1. This parameter is sampled. V
2. The input capacitance per pin group will not differ by more than this maximum amount
3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maxi-
V
fact that they are matched in loading.
for any given device.
mum amount for any given device.
DDQ
/2, V
OUT
(peak-to-peak) = 0.2V. DM input is grouped with I/O pins, reflecting the
Symbol
19
C
C
C
C
DCK
C
DIO
DI
IO
DD
I
/V
DDQ
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
= 1.70–1.95V, f = 100 MHz, T
Min
1.5
1.5
–
–
–
Max
Electrical Specifications
0.25
3.0
0.5
4.5
0.5
©2007 Micron Technology, Inc. All rights reserved.
A
Unit
= 25˚C, V
pF
pF
pF
pF
pF
OUT(DC)
Notes
2
2
3
=
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