PESD3V3V4UF T/R NXP Semiconductors, PESD3V3V4UF T/R Datasheet - Page 8

• Manufacturer Part Number: PESD3V3V4UF T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3V4UF T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.3 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 1.5 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Package / Case: SOT-886
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 5000
• Part # Aliases: PESD3V3V4UF,115

NXP Semiconductors
PESDXV4UF_G_W_3
Product data sheet
Fig 8. ESD clamping test setup and waveforms
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
IEC 61000-4-2 network
C
Z
= 150 pF; R
ESD TESTER
C
Z
R
Z
Z
= 330
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
Device
Under
DUT
Test
Rev. 03 — 28 January 2008
Very low capacitance quadruple ESD protection diode arrays
450
RG 223/U
50
GND
GND
GND
coax
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
ATTENUATOR
10
PESDxV4UF/G/W
PESD3V3V4UF/G/W
PESD5V0V4UF/G/W
vertical scale = 5 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
OSCILLOSCOPE
4 GHz DIGITAL
© NXP B.V. 2008. All rights reserved.
50
006aab125
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