IS42S32160C-75BL ISSI, Integrated Silicon Solution Inc, IS42S32160C-75BL Datasheet - Page 20

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IS42S32160C-75BL

Manufacturer Part Number
IS42S32160C-75BL
Description
IC SDRAM 512MBIT 133MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet

Specifications of IS42S32160C-75BL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
512M (16M x 32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-BGA
Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
WBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
260mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S32160C-75BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32160C-75BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32160C-75BLI
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32160C-75BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32160C-75BLI
Manufacturer:
FSC
Quantity:
5
Part Number:
IS42S32160C-75BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32160C
20
D.C. ELECTRICAL CHARACTERISTICS (RECOMMENDED OPERATING CONDITIONS)
Parameter
Operating Current
t
Precharge Standby Current in power down mode
Precharge Standby Current in power down mode
Precharge Standby Current in non-power down mode
Precharge Standby Current in non-power down mode
Active Standby Current in power down mode
Active Standby Current in power down mode
Active Standby Current in non-power down mode
Active Standby Current in non-power down mode
Operating Current (Burst mode)
t
Refresh Current
Self Refresh Current
signal one transition per one cycle
RC
CK
t
CK
t
CKE V
CKE
CKE
CKE& CLK
CKE V
CKE
t
CKE
V
V
CK
RC
I
=t
I
OL
IL
OH
OL
=
t
CK
= 15ns, CKE
RC
(min),
t
RC
(min), Outputs Open, Input
, CKE
V
0.2V
V
V
IL
(min)
IH
IH
IH
IH
(max), t
(0V
Description/ Test Condition
(min), CS#
(min), CLK
(min), CS#
(min), CLK
Outputs Open, Multi-bank interleave
V
V
IL
V
IL
(max), t
CK
IN
(max)
V
LVTTL Output "H" Level Voltage
LVTTL Output "L" Level Voltage
(0V
= 15ns
IL
(max)
V
DD
V
V
V
V
Output Leakage Current
CK
Input Leakage Current
IH
IL
IH
IL
V
, All other pins not under test = 0V )
(max), t
(max), t
(min), t
(min), t
=
OUT
( I
( I
Description
OUT
OUT
CK
CK
V
CK
CK
= -2mA )
= 2mA )
DD
= 15ns
= 15ns
=
=
, DQ disable )
1 bank
operation
Symbol
I
I
I
I
I
I
I
I
DD2PS
DD3PS
DD3NS
DD2NS
I
DD3N
I
I
I
DD2P
DD2N
DD3P
DD1
DD4
DD5
DD6
300
360
- 5
- 5
-6
Min.
300
2.4
4
40
6
6
80
50
4
60
6
1
Max.
Integrated Silicon Solution, Inc.
Max.
+ 5
+ 5
270
260
320
0.4
-75
4
60
4
40
6
6
80
50
6
µ A
Unit
µA
Unit
mA
V
V
Note
Note
3, 4
3
3
Rev. B
01/22/09

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