IS61LF25636A-7.5TQI ISSI, Integrated Silicon Solution Inc, IS61LF25636A-7.5TQI Datasheet - Page 11

no-image

IS61LF25636A-7.5TQI

Manufacturer Part Number
IS61LF25636A-7.5TQI
Description
IC SRAM 9MBIT 7.5NS 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LF25636A-7.5TQI

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61LF25636A-7.5TQI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61LF25636A-7.5TQI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
 IS61/64LF25636A   IS61LF51218A   IS61VF25636A   IS61VF51218A
LINEAR BURST ADDRESS TABLE (MODE = VSS)
     
ABSOLUTE MAxIMUM RATINGS
  Symbol  Parameter 
T
P
I
V
V
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
2. This device contains circuity to protect the inputs against damage due to high static voltages
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc.
Rev. H
07/22/2010
INTERLEAVED BURST ADDRESS TABLE (MODE = V
  External Address 
nent damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
or electric fields; however, precautions may be taken to avoid application of any voltage
higher than maximum rated voltages to this high-impedance circuit.
OuT
sTg
d
IN
IN
dd
, V
A1  A0 
A1', A0' = 1,1
OuT
00
01
10
11
Voltage Relative to Vss for I/O Pins
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to Vss for
for Address and Control Inputs
Voltage on V
1st Burst Address 
dd
Supply Relative to Vss
A1  A0 
01
00
11
10
0,0
1,0
(1)
2nd Burst Address 
–0.5 to V
A1  A0 
0,1
–0.5 to V
10
11
00
01
–55 to +150
–0.5 to 4.6
Value 
100
1.6
ddq
dd
DD
+ 0.5
+ 0.5
or No Connect)
3rd Burst Address
Unit
mA
°C
W
V
V
V
A1  A0
11
10
01
00
11

Related parts for IS61LF25636A-7.5TQI