IS61VPS25636A-200TQLI ISSI, Integrated Silicon Solution Inc, IS61VPS25636A-200TQLI Datasheet - Page 13

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IS61VPS25636A-200TQLI

Manufacturer Part Number
IS61VPS25636A-200TQLI
Description
IC SRAM 9MBIT 200MHZ 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61VPS25636A-200TQLI

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Density
9Mb
Access Time (max)
3.1ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
200MHz
Operating Supply Voltage (typ)
2.5V
Address Bus
18b
Package Type
TQFP
Operating Temp Range
-40C to 85C
Number Of Ports
4
Supply Current
275mA
Operating Supply Voltage (min)
2.375V
Operating Supply Voltage (max)
2.625V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
256K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61VPS25636A-200TQLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61VPS25636A-200TQLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
OPERATINg RANgE (IS61LPSxxxxx)
OPERATINg RANgE (IS61VPSxxxxx)
OPERATINg RANgE (IS64LPSxxxxx)
DC ELECTRICAL CHARACTERISTICS
Integrated Silicon Solution, Inc.
Rev. K
01/19/10
Symbol
V
V
V
V
I
I
lI
lO
Range
Commercial
Industrial
Range
Commercial
Industrial
Range
Automotive
Oh
Ol
Ih
Il
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current Vss ≤ V
Ambient Temperature
Ambient Temperature
Ambient Temperature
–40°C to +125°C
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
0°C to +70°C
Test Conditions
I
I
I
I
Vss ≤ V
OE = V
Oh
Oh
Ol
Ol
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
Ih
IN
OuT
≤ V
(Over Operating Range)
≤ V
dd
3.3V + 5%
3.3V + 5%
2.5V + 5%
3.3V + 5%
2.5V + 5%
ddq
(1)
V
V
V
,
DD
DD
DD
Min.
-0.3
2.4
2.0
-5
-5
3.3V
V
3.3V / 2.5V + 5%
3.3V / 2.5V + 5%
3.3V / 2.5V + 5%
dd
Max.
0.4
0.8
2.5V + 5%
2.5V + 5%
5
5
+ 0.3
V
V
V
DDq
DDq
DDq
Min.
-0.3
2.0
1.7
-5
-5
2.5V
V
dd
Max.
0.4
0.7
5
5
+ 0.3
Unit
µA
µA
V
V
V
V
13

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