IS61NLP25636A-200B2LI-TR ISSI, Integrated Silicon Solution Inc, IS61NLP25636A-200B2LI-TR Datasheet - Page 14

• Manufacturer Part Number: IS61NLP25636A-200B2LI-TR
• Description: IC SRAM 9MBIT 200MHZ 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP25636A-200B2LI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61NLP25636A/IS61NVP25636A
IS61NLP51218A/IS61NVP51218A
CAPACITANCE
3.3V I/O AC TEST CONDITIONS
3.3V I/O OUTPUT LOAD EQUIVALENT
14
Symbol
c
c
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
In
ouT
OUTPUT
Parameter
Input Capacitance
Input/Output Capacitance
(1,2)
A
= 25°c, f = 1 MHz, V
Zo= 50Ω
Figure 1
See Figures 1 and 2
0V to 3.0V
dd
1.5 ns
1.5V
1.5V
Unit
= 3.3V.
50Ω
Integrated Silicon Solution, Inc. — www.issi.com —
Conditions
V
V
ouT
In
= 0V
= 0V
OUTPUT
Max.
+3.3V
6
8
351 Ω
Figure 2
Unit
pF
pF
317 Ω
5 pF
Including
jig and
scope
1-800-379-4774
07/28/2010
Rev. G