IS61LF25636A-7.5TQI-TR ISSI, Integrated Silicon Solution Inc, IS61LF25636A-7.5TQI-TR Datasheet - Page 23
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IS61LF25636A-7.5TQI-TR
Manufacturer Part Number
IS61LF25636A-7.5TQI-TR
Description
IC SRAM 9MBIT 7.5NS 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LF25636A-7.5TQLI-TR.pdf
(32 pages)
Specifications of IS61LF25636A-7.5TQI-TR
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61LF25636A-7.5TQI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
TAP Electrical Characteristics Over the Operating Range
Notes:
TAP AC ELECTRICAL CHARACTERISTICS
Symbol Parameter
t
f
t
t
t
t
t
t
t
t
t
t
Notes:
1. Both t
2. Test conditions are specified using the load in TAP AC test conditions. t
Integrated Silicon Solution, Inc.
Rev. H
07/22/2010
Symbol
V
V
V
V
V
V
I
1. All Voltage referenced to Ground.
2. Overshoot: V
x
Oh1
Oh2
Ol1
Ol2
Ih
Il
Tcyc
Tf
Th
Tl
TMss
TdIs
cs
TMsh
TdIh
ch
TdOV
TdOx
Undershoot: Vil (AC)
Power-up: V
cs
and t
TCK Clock cycle time
TCK Clock frequency
TCK Clock HIGH
TCK Clock LOW
TMS setup to TCK Clock Rise
TDI setup to TCK Clock Rise
Capture setup to TCK Rise
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture hold after Clock Rise
TCK LOW to TDO valid
TCK LOW to TDO invalid
ch
Ih
Ih
< 2.6V and V
(AC) ≤ V
refer to the set-up and hold time requirements of latching data from the boundary scan register.
Parameter
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
≤
0.5V for t
dd
+1.5V for t
dd
< 2.4V and V
≤
t
Tcyc
≤
t
/2,
Tcyc
ddq
/2,
< 1.4V for t < 200 ms.
(1,2)
(OVER OPERATING RANGE)
Test Conditions
Vss ≤ V I ≤ V
I
I
Oh
Oh
I
I
Ol
Ol
I
OlT
= –2.0 mA
= –100 µA
= 2.0 mA
= 100 µA
= 2mA
r
/t
f
= 1 ns.
(1,2)
ddq
Min.
–0.3
Min.
100
1.7
2.1
1.7
–5
40
40
10
10
10
10
10
10
—
—
—
—
0
V
dd
Max.
Max.
0.7
0.2
0.7
—
—
—
10
—
—
—
—
—
—
—
—
20
—
+0.3
5
Units
MHz
Unit
mA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
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