PESD3V3L5UV T/R NXP Semiconductors, PESD3V3L5UV T/R Datasheet - Page 9

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PESD3V3L5UV T/R

Manufacturer Part Number
PESD3V3L5UV T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD3V3L5UV T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
5.3 V
Clamping Voltage
12 V
Operating Voltage
3.3 V
Peak Surge Current
2.5 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3(Max) mm W x 1.7(Max) mm L
Package / Case
SOT-666
Peak Pulse Power Dissipation
25 W
Factory Pack Quantity
4000
Part # Aliases
PESD3V3L5UV,115
NXP Semiconductors
PESDXL5UF_V_Y_2
Product data sheet
Fig 8. ESD clamping test setup and waveforms
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
IEC 61000-4-2 network
C
Z
= 150 pF; R
ESD TESTER
C
Z
R
Z
Z
= 330
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
Low capacitance unidirectional fivefold ESD protection diode arrays
Device
Under
DUT
Test
Rev. 02 — 8 January 2008
450
RG 223/U
50
GND1
GND2
GND
coax
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
ATTENUATOR
PESD5V0L5UF/V/Y
PESD3V3L5UF/V/Y
10
(1): attenuator is only used for open
(1)
socket high voltage measurements
PESDxL5UF/V/Y
vertical scale = 5 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
OSCILLOSCOPE
4 GHz DIGITAL
© NXP B.V. 2008. All rights reserved.
50
006aab143
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