MT46H16M32LFCX-5 IT:B Micron Technology Inc, MT46H16M32LFCX-5 IT:B Datasheet - Page 32

• Manufacturer Part Number: MT46H16M32LFCX-5 IT:B
• Description: IC DDR SDRAM 512MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H16M32LFCX-5 IT:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 14: 1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength)
Notes 1–3 apply to all values; characteristics are specified under best and worst process variations/conditions
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Voltage (V)
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
Notes:
1. Based on nominal impedance of 37Ω (three-quarter drive strength) at V
2. The full variation in driver current from minimum to maximum, due to process, voltage,
3. Contact factory for availability of three-quarter drive strength.
11.10
11.10
11.10
11.10
11.10
11.10
11.10
and temperature, will lie within the outer bounding lines of the I-V curves.
Min
0.00
1.96
3.92
5.88
7.84
9.80
Pull-Down Current (mA)
–
12.97
15.87
18.33
20.34
22.63
25.03
27.14
29.91
32.18
34.95
37.78
40.58
Max
0.00
9.38
32
512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Output Drive Characteristics
–11.10
–11.10
–11.10
–11.10
–11.10
–11.10
–11.10
–1.96
–3.92
–5.88
–7.84
–9.80
Min
0.00
–
Pull-Up Current (mA)
© 2004 Micron Technology, Inc. All rights reserved.
DDQ
–12.97
–15.87
–18.33
–20.34
–22.63
–25.03
–27.14
–29.91
–32.18
–34.95
–37.78
–40.58
–9.38
Max
0.00
/2.