IS61LPS12836A-200B2I ISSI, Integrated Silicon Solution Inc, IS61LPS12836A-200B2I Datasheet - Page 13

• Manufacturer Part Number: IS61LPS12836A-200B2I
• Description: IC SRAM 4MBIT 200MHZ 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LPS12836A-200B2I

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
POWER SUPPLY CHARACTERISTICS
Note:
1. MODE pin has an internal pullup and should be tied to V
2. Typical values are measured at V
Integrated Silicon Solution, Inc.
Rev. H
01/07/2010
Symbol Parameter
I
I
I
CC
SB
SBI
V
SS
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
CMOS Input
DD
– 0.2V.
Test Conditions
Device Selected,
OE = V
≥ V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
≥V
All Inputs ≤ 0.2V or
f = 0
DD
DD
IN
DD
DD
≤ V
= Max.,
= Max.,
– 0.2V
DD
– 0.2V,
IL
IH
SS
, f = Max.
, ZZ ≤ V
= 3.3V, T
+ 0.2V or
IL
KC
or ≥ V
IL
min.
,
A
IH
= 25
,
(1)
o
C and not 100% tested.
(Over Operating Range)
Temp. range
DD
Com.
Com.
Com.
Auto.
Auto.
Auto.
typ.
Ind.
Ind.
Ind.
or V
(2)
SS
. It exhibits ±100µA maximum leakage current when tied to ≤
225
250
275
100
120
x18
90
70
75
90
-250
MAX
40
x32/x36
225
250
275
100
120
90
70
75
90
200
210
225
100
120
x18
90
70
75
90
-200
MAX
40
x32/x36
200
210
225
100
120
90
70
75
90
Unit
mA
mA
mA
13