IS42S32800D-6BL ISSI, Integrated Silicon Solution Inc, IS42S32800D-6BL Datasheet - Page 12

• Manufacturer Part Number: IS42S32800D-6BL
• Description: IC SDRAM 256MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800D-6BL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 13b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32800D
12
CLK
COMMAND
DQ’s
CLK
COMMAND
Note:The DQMs can remain low in this example if the length of the write burst is 1 or 2.
CAS# latency=2
t CK2 , DQ’s
CAS# latency=3
t CK3 , DQ’s
CLK
DQM
COMMAND
ADDRESS
DQ
The Read command that interrupts a write burst without auto precharge function should be issued one cycle after
the clock edge in which the last data-in element is registered.In order to avoid data contention,input data must
be removed from the DQs at least one clock cycle before the first read data appears on the outputs (refer to the
following figure).Once the Read command is registered,the data inputs will be ignored and writes will not be
executed.
The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge function
should be issued m cycles after the clock edge in which the last data-in element is registered,where m equals tWR/
tCK rounded up to the next whole number.In addition,the DQM signals must be used to mask input data,starting
with the clock edge following the last data-in element and ending with the clock edge on which the BankPrecharge/
PrechargeAll command is entered (refer to the following figure).
: don t care
Write Interrupted by a Write (Burst Length =4,CAS#Latency =2,3)
Write Interrupted by a Read (Burst Length =4,CAS#Latency =2,3)
T0
T0
NOP
NOP
BANK
COL n
WRITE
DIN
T0
n
Input data for the write is masked.
WRITEA
WRITEA
DIN A 0
T 1
T1
DIN A 0
DIN A 0
1 Clk Interval
NOP
n + 1
T1
WRITEB
t WR
READ B
DIN B 0
don’t care
don’t care
T2
T2
Precharge
BANK (S)
T2
DIN B 1
Write to Precharge
don’t care
T3
T3
NOP
NOP
NOP
DI N
T3
DIN B 2
T4
NOP
T4
NOP
t RP
DOUT B 0
NOP
Integrated Silicon Solution, Inc. — www.issi.com
Input data must be removed from the DQs at least one clock
cycle before the Read data appears on the outputs to avoid
data contention.
T4
DIN B 3
T5
T5
NOP
NOP
DOUT B 0
DOUT B 1
Activate
ROW
T5
T6
NOP
T6
NOP
DOUT B 2
DOUT B 1
NOP
T6
T7
T7
NOP
DOUT B 3
NOP
DOUT B 2
T8
NOP
T8
NOP
DOUT B 3
Rev. 00B
11/21/07