IS42S32800B-6T-TR ISSI, Integrated Silicon Solution Inc, IS42S32800B-6T-TR Datasheet - Page 24
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IS42S32800B-6T-TR
Manufacturer Part Number
IS42S32800B-6T-TR
Description
IC SDRAM 256MBIT 166MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-6T-TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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IS42S32800B
24
I
Timing Waveforms
Figure 1.AC Parameters for Write Timing (Burst Length=4,CAS#Latency=2)
ADDR.
BS0,1
RAS#
CAS#
DQM
CKE
CS#
WE#
CLK
DQ
Hi-Z
t
CH
T0
t
t
IS
IS
T1
t
CL
Command
Activate
Bank A
RBx
T2
t
t
IS
IH
t
RCD
t
t
CK2
Auto Precharge
IH
T3 T4 T5 T6 T7
Write with
Command
Bank A
CAx
Ax0 Ax1 Ax2
t
RC
Command
Activate
Bank B
RBx
Begin Auto Precharge
-5 ,
Ax3 Bx0
Auto Precharge
Write with
Command
Bank A
Bank B
CBx
t
DAL
T8
Bx1
, -7 ,
T9
Command
Activate
Bank A
RAy
Bx2
T10
Begin Auto Precharge
t
IS
Bx3
T11
Command
Bank B
Bank A
Write
Ay0 Ay1 Ay2 Ay3
CAy
T12
x
t
T13
IH
T14
T15 T16 T17 T18 T19
t
Precharge
Command
WR
Bank A
Integrated Silicon Solution, Inc.
x
t
RP
Command
Activate
Bank A
RAz
t
RRD
t
IS
Command
Activate
Bank B
RBy
T20
I
T21
T22
07/21/09
Rev. F
®
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