PESD24VS4UD T/R NXP Semiconductors, PESD24VS4UD T/R Datasheet - Page 6

• Manufacturer Part Number: PESD24VS4UD T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD24VS4UD T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 25.5 V
• Clamping Voltage: 52 V
• Operating Voltage: 24 V
• Peak Surge Current: 4 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.7(Max) mm W x 3.1(Max) mm L
• Package / Case: TSOP-6
• Peak Pulse Power Dissipation: 200 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD24VS4UD,115

NXP Semiconductors
PESDXS4UD_SER_2
Product data sheet
Fig 5.
Fig 7.
I
RM(25 C)
I
(pF)
RM
C
(1) PESD3V3S4UD
(2) PESD5V0S4UD
10
220
180
140
100
d
60
10
1
1
100
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
PESD3V3S4UD
PESD5V0S4UD
I
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
R
is less than 5 nA at 150 C
1
50
amb
= 25 C
2
0
(1)
(2)
50
3
100
4
006aaa700
006aaa699
V
T
j
R
( C)
(V)
150
Rev. 02 — 21 August 2009
5
Quadruple ESD protection diode arrays in a SOT457 package
Fig 6.
Fig 8.
(pF)
C
(1) PESD12VS4UD
(2) PESD15VS4UD
(3) PESD24VS4UD
d
V
80
60
40
20
CL
0
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
V-I characteristics for a unidirectional ESD
protection diode
V
BR
PESDxS4UD series
V
5
RWM
amb
P-N
(1)
(2)
(3)
= 25 C
10
+
15
I
I
I
I
RM
R
PP
© NXP B.V. 2009. All rights reserved.
20
006aaa701
V
R
(V)
006aaa407
25
V
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