IS42S32400D-6B ISSI, Integrated Silicon Solution Inc, IS42S32400D-6B Datasheet - Page 14

• Manufacturer Part Number: IS42S32400D-6B
• Description: IC SDRAM 128MBIT 166MHZ 90FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32400D-6B

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-FBGA
• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: Mini BGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DC RECOMMENDED OPERATING CONDITIONS
Symbol
IS42S32400D
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
14
Symbol
V
V
V
V
P
I
T
T
the device. This is a stress rating only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Symbol
C
C
CI/O
CS
IH
IL
OUT
OPR
STG
DD MAX
DDQ MAX
IN
D MAX
IN1
IN2
V
V
V
(min) = -1.2V (
V
(max) = V
DDQ
IH
IL
DD
(2)
(1)
DDQ
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance:I/Os
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
+1.2V (
PULSE WIDTH
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
PULSE WIDTH
< 3
NS
).
< 3
NS
).
(1)
(At T
A
= 0 to +25°C, V
Com.
Ind.
Min.
-0.3
2.0
3.0
3.0
Min.
2.5
2.5
4.0
–1.0 to V
–0.5 to V
Integrated Silicon Solution, Inc. — www.issi.com
Typ.
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
3.3
3.3
—
—
–40 to +85
DD
0 to +70
Rating
= V
50
1
DDQ
DD
DDQ
+ 0.5
+ 0.5
V
= 3.3 ± 0.3V)
DDQ
Max.
+0.8
3.6
3.6
3.5
3.8
6.5
-6
+ 0.3
Max.
Unit
mA
°C
°C
W
V
V
V
V
Unit
4.0
5.0
6.5
V
V
V
V
-7
Unit
pF
pF
pF
03/03/09
Rev. F