IS45S32400B-7TLA1 ISSI, Integrated Silicon Solution Inc, IS45S32400B-7TLA1 Datasheet - Page 17

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IS45S32400B-7TLA1

Manufacturer Part Number
IS45S32400B-7TLA1
Description
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS45S32400B-7TLA1

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
86-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS45S32400B
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
11/12/09
SYMBOL PARAMETER
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
cac
rcd
rac
rc
ras
rp
rrd
ccd
dpl
dal
rbd
wbd
rql
wdl
pql
qmd
dmd
mrd
Clock Cycle Time
Operating Frequency
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (t
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time5
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
rcd
+ t
cac
)
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
166
10
-2
6
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
143
10
–2
7
3
3
6
7
3
2
1
2
4
3
0
3
0
2
0
2
125
2/3
-2
-1
8
3
6
5
8
6
3
2
1
2
4
3
2
0
3
2
0
2
0
2
cycle
100
2/3
10
-2
-1
2
5
4
7
5
2
2
1
2
3
2
0
3
2
0
2
0
2
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
17

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