MT46H8M16LFBF-5:K TR Micron Technology Inc, MT46H8M16LFBF-5:K TR Datasheet - Page 85

• Manufacturer Part Number: MT46H8M16LFBF-5:K TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFBF-5:K TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 46: Bank Write – With Auto Precharge
Command
PDF: 09005aef8331b3e9
128mb_mobile_ddr_sdram_t35m.pdf - Rev. F 03/10 EN
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
1
t
t
IS
IS
NOP
T0
t
4
t
IH
IH
Notes:
t
t
IS
ACTIVE
IS
Bank x
Row
Row
T1
t
IH
t
IH
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. D
t
CK
these times.
t
IN
t
RCD
RAS
n = data-out from column n.
NOP
T2
4
t
CH
t
CL
t
t
WRITE
WPRES
Bank x
IS
Col n
T3
Note 3
t
t
IH
DQSS (NOM)
2
85
t
DS
NOP
D
T4
128Mb: x16, x32 Mobile LPDDR SDRAM
IN
t
WPRE
4
t
DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP
T5
t
4
DQSH
T5n
t
WPST
NOP
T6
4
Don’t Care
© 2007 Micron Technology, Inc. All rights reserved.
Auto Precharge
t
WR
NOP
T7
4
Transitioning Data
NOP
T8
4
t
RP