IS62WV51216ALL-70BLI ISSI, Integrated Silicon Solution Inc, IS62WV51216ALL-70BLI Datasheet - Page 10

no-image

IS62WV51216ALL-70BLI

Manufacturer Part Number
IS62WV51216ALL-70BLI
Description
IC SRAM 8MBIT 70NS 48TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS62WV51216ALL-70BLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
8M (512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS62WV51216ALL-70BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS62WV51216ALL-70BLI
Manufacturer:
ISSI
Quantity:
20 000
Part Number:
IS62WV51216ALL-70BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS62WV51216ALL,
WRITE CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to
2. The internal write time is defined by the overlap of CS1 LOW, CS2 HIGH and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
4. t
AC WAVEFORMS
WRITE CYCLE NO. 1
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS1 , CS2 and WE inputs and at
2. WRITE = (CS1) [ (LB) = (UB) ] (WE).
10
Symbol
t
t
t
t
t
t
t
t
t
t
t
V
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
least one of the LB and UB inputs being in the LOW state.
WC
SCS1/
AW
HA
SA
PWB
SD
HD
HZWE
LZWE
PWE
PWE
DD
-0.2V/0.4V to V
(4)
> t
(3)
t
(3)
SCS2
HZWE
Parameter
Write Cycle Time
CS1/CS2 to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
LB, UB Valid to End of Write
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
+ t
ADDRESS
SD
LB, UB
when OE is LOW.
DOUT
DD
CS1
CS2
DIN
WE
-0.3V and output loading specified in Figure 1.
(1,2)
(CS1 Controlled, OE = HIGH or LOW)
IS62WV51216BLL
t
DATA UNDEFINED
SA
Integrated Silicon Solution, Inc. — www.issi.com —
Min.
t
AW
45
35
35
35
35
20
0
0
0
5
t
HZWE
45ns
t
t
SCS2
SCS1
Max.
t
t
t
PWB
20
WC
PWE
(1,2)
HIGH-Z
(Over Operating Range)
t
SD
Min.
DATA-IN VALID
55
45
45
45
40
25
0
0
0
5
55 ns
Max.
20
t
HA
t
t
LZWE
HD
Min.
60
70
60
60
30
50
0
0
0
5
70 ns
Max.
30
1-800-379-4774
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12/13/2007
Rev. D

Related parts for IS62WV51216ALL-70BLI