IS42S81600D-7TL ISSI, Integrated Silicon Solution Inc, IS42S81600D-7TL Datasheet - Page 44

• Manufacturer Part Number: IS42S81600D-7TL
• Description: IC SDRAM 128MBIT 143MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S81600D-7TL

• Package / Case: 54-TSOP II
• Memory Size: 128M (16M x 8)
• Format - Memory: RAM
• Memory Type: SDRAM
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 143 MHz
• Access Time: 6.5 ns, 5.4 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 120 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1026

IS42S81600D,
ALTERNATING BANK WRITE ACCESSES
Notes:
1) Burst Length = 4
2) X16: A9 and A11 = "Don't Care"
44
DQM/DQML
COMMAND
A0-A9, A11
X8: A11 = "Don't Care"
BA0, BA1
DQMH
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
AH
AH
AH
CMH
t
t
t
t
RCD
RRD
RAS
RC
t
CK
- BANK 0
IS42S16800D
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
t
COLUMN m
DS
BANK 0
WRITE
D
T2
IN
t
t
CMH
t
DH
m
CH
(2)
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
BANK 1
DS
ACTIVE
ROW
ROW
D
T4
IN
t
m+
DH
2
t
RCD
t
DS
D
- BANK 1
ENABLE AUTO PRECHARGE
T5
IN
NOP
Integrated Silicon Solution, Inc. — www.issi.com
m+
t
DH
t
DPL
3
- BANK 0
t
COLUMN b
DS
BANK 1
WRITE
T6
D
IN
t
DH
b
(2)
t
DS
D
t
RP
T7
NOP
IN
t
- BANK 0
b+
DH
1
t
DS
D
T8
NOP
IN
t
b+
DH
2
t
DS
ACTIVE
DON'T CARE
BANK 0
D
T9
ROW
ROW
IN
t
b+
t
t
DH
RCD
DPL
3
- BANK 0
- BANK 1
07/28/08
Rev. E