PBSS3540M T/R NXP Semiconductors, PBSS3540M T/R Datasheet - Page 2

• Manufacturer Part Number: PBSS3540M T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS3540M T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-101
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PBSS3540M,315

NXP Semiconductors
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability I
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management:
• Peripheral driver:
DESCRIPTION
Low V
small plastic package.
NPN complement: PBSS2540M.
MARKING
2003 Aug 12
PBSS3540M
– DC-DC converter
– Supply line switching
– Battery charger
– LCD backlighting.
– Driver in low supply voltage applications (e.g. lamps
– Inductive load drivers (e.g. relays, buzzers and
40 V, 0.5 A
PNP low V
and LEDs).
motors).
CEsat
TYPE NUMBER
PNP transistor in a SOT883 leadless ultra
CEsat
(BISS) transistor
MARKING CODE
C
and I
DA
CM
CEsat
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PIN
1
2
3
Fig.1 Simplified outline (SOT883) and symbol.
2
1
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
emitter
collector
Bottom view
PARAMETER
DESCRIPTION
3
MAM469
PBSS3540M
Product data sheet
1
−40
−500
−1
<700
MAX.
3
2
V
mA
A
mΩ
UNIT