PMBT5550 T/R NXP Semiconductors, PMBT5550 T/R Datasheet - Page 4

• Manufacturer Part Number: PMBT5550 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PMBT5550 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 160 V
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 60 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.3 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PMBT5550,215

NXP Semiconductors
2004 Jan 21
handbook, full pagewidth
NPN high-voltage transistor
h FE
160
120
80
40
0
10
−1
1
Fig.2 DC current gain; typical values.
4
10
V CE = 5 V
10
2
I C mA
PMBT5550
Product data sheet
MGD814
10
3