PMBT2369 /T3 NXP Semiconductors, PMBT2369 /T3 Datasheet - Page 7
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PMBT2369 /T3
Manufacturer Part Number
PMBT2369 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.PMBT2369_T3.pdf
(7 pages)
Specifications of PMBT2369 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
500 MHz
Dc Collector/base Gain Hfe Min
40 at 10 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.2 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMBT2369,235
Printed in The Netherlands
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R75/04/pp 7
Date of release: 2004 Jan 22
Document order number:
9397 750 12458