PBSS4230T T/R NXP Semiconductors, PBSS4230T T/R Datasheet - Page 4

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PBSS4230T T/R

Manufacturer Part Number
PBSS4230T T/R
Description
Transistors Bipolar - BJT NPN 30V 2A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4230T T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
230 MHz
Dc Collector/base Gain Hfe Min
350 at 100 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
2 A
Maximum Power Dissipation
480 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS4230T,215
NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Sep 29
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
30 V, 2 A
NPN low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
(BISS) transistor
V
V
V
V
V
V
V
I
I
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 750 mA; I
= 1 A; I
= 2 A; I
= 500 mA; I
= 2 A; I
= 100 mA; V
= 4 V; I
= 30 V; I
= 30 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
4
B
B
B
CONDITIONS
= 50 mA; note 1
= 200 mA; note 1
= 200 mA; note 1
C
C
C
C
C
C
E
E
E
= 0
= 100 mA
= 500 mA
= 1 A
= 2 A
= 100 mA
B
B
B
B
= 0
= 0; T
= I
CE
= 1 mA
= 50 mA
= 15 mA
= 50 mA; note 1
e
= 10 V;
= 0; f = 1 MHz
j
= 150 °C
350
300
300
150
100
MIN.
470
450
420
250
45
70
120
130
240
140
230
15
TYP.
PBSS4230T
Product data sheet
100
50
100
70
100
180
180
320
200
1.1
0.75
20
MAX.
nA
μA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
UNIT

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