BST51 /T3 NXP Semiconductors, BST51 /T3 Datasheet - Page 3

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BST51 /T3

Manufacturer Part Number
BST51 /T3
Description
Transistors Bipolar - BJT TRANS DARLINGTON TAPE-13
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BST51 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
80 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Dc Collector/base Gain Hfe Min
1000 at 150 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89-4
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BST51,135
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2004 Dec 09
V
V
V
I
I
I
P
T
T
T
R
R
C
CM
B
SYMBOL
SYMBOL
j
amb
stg
CBO
CES
EBO
tot
NPN Darlington transistors
th(j-a)
th(j-s)
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
ambient temperature
storage temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BST50
BST51
BST52
BST50
BST51
BST52
PARAMETER
PARAMETER
open emitter
V
open collector
T
amb
BE
= 0 V
≤ 25 °C; note 1
3
CONDITIONS
note 1
CONDITIONS
BST50; BST51; BST52
−65
−65
MIN.
VALUE
96
16
60
80
90
45
60
80
5
1
2
100
1.3
150
+150
+150
MAX.
Product data sheet
UNIT
K/W
K/W
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
°C
2
2
UNIT
.
.

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