BC859BW /T3 NXP Semiconductors, BC859BW /T3 Datasheet - Page 4

• Manufacturer Part Number: BC859BW /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC859BW /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC859BW,135

NXP Semiconductors
1999 Apr 12
handbook, full pagewidth
handbook, full pagewidth
PNP general purpose transistors
BC859BW; BC860BW.
BC859CW; BC860CW.
h FE
h FE
600
500
400
300
200
100
400
300
200
100
−10
−10
0
0
−2
−2
−10
−10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
−1
−1
4
−10
−10
V CE = −5 V
V CE = −5 V
BC859W; BC860W
−10
−10
2
2
I C (mA)
I C (mA)
Product data sheet
MBH728
MBH727
−10
−10
3
3