BCV61B T/R NXP Semiconductors, BCV61B T/R Datasheet - Page 2

• Manufacturer Part Number: BCV61B T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV61B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV61B,215

NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
BCV61_4
Product data sheet
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
BCV61
BCV61A
BCV61B
BCV61C
Type number
BCV61
BCV61A
BCV61B
BCV61C
Symbol
Per transistor
V
V
V
I
I
I
Per device
P
T
T
T
C
CM
BM
j
amb
stg
CBO
CEO
EBS
tot
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Device mounted on an FR4 Printed-Circuit Board (PCB).
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Ordering information
Marking codes
Limiting values
Package
Name
-
Rev. 04 — 18 December 2009
Description
plastic surface-mounted package; 4 leads
open emitter
open base
T
Conditions
V
amb
CE
Marking code
1M*
1J*
1K*
1L*
= 0 V
NPN general-purpose double transistors
≤ 25 °C
[1]
[1]
Min
-
-
-
-
-
-
-
-
−65
−65
© NXP B.V. 2009. All rights reserved.
Max
30
30
6
100
200
200
250
150
+150
+150
BCV61
Version
SOT143B
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
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