BULD1101ET4 STMicroelectronics, BULD1101ET4 Datasheet - Page 5
BULD1101ET4
Manufacturer Part Number
BULD1101ET4
Description
Transistors Bipolar - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
Manufacturer
STMicroelectronics
Datasheet
1.BULD1101ET4.pdf
(11 pages)
Specifications of BULD1101ET4
Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
450 V
Emitter- Base Voltage Vebo
12 V
Maximum Dc Collector Current
3 A
Dc Collector/base Gain Hfe Min
20
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Maximum Power Dissipation
35000 mW
Factory Pack Quantity
2500
Available stocks
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Part Number
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Quantity
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BULD1101E
Figure 7.
Figure 9.
DC current gain
Reverse biased safe
operating area
Figure 8.
Resistive load switching
times
Electrical characteristics
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