PMP5501G T/R NXP Semiconductors, PMP5501G T/R Datasheet - Page 11

• Manufacturer Part Number: PMP5501G T/R
• Description: Transistors Bipolar - BJT MATCHED PAIR
• Manufacturer: NXP Semiconductors

Specifications of PMP5501G T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 175 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-353
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PMP5501G,115

NXP Semiconductors
PMP5501V_G_Y_3
Product data sheet
Fig 17. Reflow soldering footprint SOT363 (SC-88)
Fig 18. Wave soldering footprint SOT363 (SC-88)
4.5
2.35
1.5
PMP5501V; PMP5501G; PMP5501Y
1.3
(4 )
0.6
(4 )
0.5
Rev. 03 — 28 August 2009
2.45
5.3
(4 )
(4 )
0.5
0.6
1.3
2.65
1.8
(2 )
0.6
1.5
1.5
0.4 (2 )
0.3
PNP/PNP matched double transistors
2.5
Dimensions in mm
direction during soldering
Dimensions in mm
© NXP B.V. 2009. All rights reserved.
solder lands
solder resist
solder paste
occupied area
preferred transport
sot363_fr
solder lands
solder resist
occupied area
sot363_fw
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