BST39 T/R NXP Semiconductors, BST39 T/R Datasheet - Page 2

• Manufacturer Part Number: BST39 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BST39 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 400 V
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 70 MHz
• Dc Collector/base Gain Hfe Min: 40 at 20 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 1300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BST39,115

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 350 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BST15 and BST16.
MARKING
ORDERING INFORMATION
2004 Dec 14
BST39
BST40
BST39
BST40
TYPE NUMBER
NPN high-voltage transistors
TYPE NUMBER
NAME
SC-62
MARKING CODE
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
AT1
AT2
2
PINNING
DESCRIPTION
PACKAGE
PIN
Fig.1 Simplified outline (SOT89) and symbol.
1
2
3
3
emitter
collector
base
2
1
DESCRIPTION
BST39; BST40
3
sym042
Product data sheet
2
1
VERSION
SOT89