PMST2222 T/R NXP Semiconductors, PMST2222 T/R Datasheet - Page 5

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PMST2222 T/R

Manufacturer Part Number
PMST2222 T/R
Description
Transistors Bipolar - BJT TRANS SW TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMST2222 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
250 MHz
Dc Collector/base Gain Hfe Min
35 at 0.1 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.6 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PMST2222,115
NXP Semiconductors
PACKAGE OUTLINE
1999 Apr 22
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
NPN switching transistors
UNIT
mm
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
1.3
e
w
B
M
0.65
B
e 1
SC-70
scale
EIAJ
1
5
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
PMST2222; PMST2222A
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
Product data sheet
X
v
ISSUE DATE
97-02-28
M
A
SOT323

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