BC337-40 T/R NXP Semiconductors, BC337-40 T/R Datasheet - Page 7
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BC337-40 T/R
Manufacturer Part Number
BC337-40 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE RADIAL
Manufacturer
NXP Semiconductors
Datasheet
1.BC337-25_TR.pdf
(19 pages)
Specifications of BC337-40 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
250 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Dc Current Gain Hfe Max
250 at 100 mA at 1 V
Maximum Power Dissipation
625 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
BC337-40,116
NXP Semiconductors
BC817_BC817W_BC337_6
Product data sheet
Fig 4.
Fig 6.
V
BEsat
(V)
10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
−1
1
10
I
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
I
Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
−1
C
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
1
(1)
(2)
(3)
10
V
BEsat
(V)
10
10
−1
10
1
10
2
−1
I
006aaa134
C
(mA)
Rev. 06 — 17 November 2009
10
1
3
(1)
(2)
(3)
10
Fig 5.
V
BC817; BC817W; BC337
BEsat
(V)
10
(1) T
(2) T
(3) T
45 V, 500 mA NPN general-purpose transistors
10
−1
10
1
10
I
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
2
−1
C
amb
amb
amb
I
/I
006aaa136
C
B
(mA)
= 10
= −55 °C
= 25 °C
= 150 °C
10
1
3
(1)
(2)
(3)
10
10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa135
C
(mA)
10
3
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