BC846W /T3 NXP Semiconductors, BC846W /T3 Datasheet - Page 12

• Manufacturer Part Number: BC846W /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC846W /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 110 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC846W,135

NXP Semiconductors
11. Revision history
Table 10.
BC846_SER
Product data sheet
Document ID
BC846_SER v.9
Modifications:
BC846_SER v.8
BC846_BC546_SER v.7
BC846_BC546_SER v.6
Revision history
Release date
20120925
20120424
20091117
20060207
•
Table 6 “Limiting
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 25 September 2012
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
values”: P
tot
values corrected
65 V, 100 mA NPN general-purpose transistors
Change notice Supersedes
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BC846 series
BC846_BC546_SER v.7
BC846_BC546_SER v.6
BC846_SER v.8
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© NXP B.V. 2012. All rights reserved.
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