BCV62B T/R NXP Semiconductors, BCV62B T/R Datasheet - Page 9

• Manufacturer Part Number: BCV62B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV62B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV62B,215

NXP Semiconductors
9. Package outline
10. Packing information
BCV62
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
BCV62
BCV62A
BCV62B
BCV62C
Fig 16. Package outline SOT143B
For further information and the availability of packing methods, see
Packing methods
SOT143B
All information provided in this document is subject to legal disclaimers.
2.5
2.1
Dimensions in mm
Rev. 4 — 26 July 2010
1.4
1.2
Description
4 mm pitch, 8 mm tape and reel
1
4
0.88
0.78
3.0
2.8
1.9
1.7
PNP general-purpose double transistors
3
2
0.48
0.38
0.45
0.15
Section
1.1
0.9
[1]
0.15
0.09
04-11-16
14.
Packing quantity
3000
-215
© NXP B.V. 2010. All rights reserved.
BCV62
10000
-235
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