BC857BS /T3 NXP Semiconductors, BC857BS /T3 Datasheet - Page 5

• Manufacturer Part Number: BC857BS /T3
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC857BS /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC857BS,135

NXP Semiconductors
PACKAGE OUTLINE
1999 Apr 26
Plastic surface mounted package; 6 leads
PNP general purpose double transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
5
2
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
0
REFERENCES
1.3
e
w
B
M
B
0.65
e
1
SC-88
scale
EIAJ
5
1
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
A
y
c
Product data sheet
BC857BS
X
v
ISSUE DATE
M
97-02-28
A
SOT363