BCM847DS /T3 NXP Semiconductors, BCM847DS /T3 Datasheet - Page 6

• Manufacturer Part Number: BCM847DS /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCM847DS /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCM847DS,135

NXP Semiconductors
BCM847BV_BS_DS_6
Product data sheet
Fig 1.
Fig 3.
V
BEsat
(V)
(A)
I
(1) T
(2) T
(3) T
0.20
0.16
0.12
0.08
0.04
C
1.3
1.1
0.9
0.7
0.5
0.3
0.1
0
10
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
I
B
amb
amb
amb
amb
1
/I
(mA) = 4.50
B
= 20
= 25 C
= 55 C
= 25 C
= 100 C
2
4.05
3.60
3.15
1
(1)
(2)
(3)
4
10
6
1.35
0.90
0.45
2.70
2.25
1.80
10
2
8
I
006aaa534
006aaa532
C
V
(mA)
CE
(V)
10
Rev. 06 — 28 August 2009
10
3
Fig 2.
Fig 4.
V
h
CEsat
(V)
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
FE
600
400
200
10
0
1
10
1
2
10
V
DC current gain as a function of collector
current; typical values
I
Collector-emitter saturation voltage as a
function of collector current; typical values
C
amb
amb
amb
amb
amb
amb
2
CE
1
/I
B
= 5 V
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
10
NPN/NPN matched double transistors
BCM847BV/BS/DS
(1)
(2)
(3)
1
1
(1)
(2)
(3)
1
10
10
10
© NXP B.V. 2009. All rights reserved.
2
10
I
006aaa533
2
006aaa535
C
I
C
(mA)
(mA)
10
10
3
3
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